*
*
*
*
*
* -1.2A, -500V, RDS(on) = 10.5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche t.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts